Interfacial sources of extended defects in nonpolar and semipolar III-Nitride semiconductors

Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices

Nonpolar and semipolar III–nitride quantum wells (QWs) and devices have been extensively studied due to their unique valence band (VB) structure and polarized optical emission. Unlike conventional c-plane oriented III–nitride QWs, the low crystal symmetry and unbalanced biaxial stress in nonpolar and semipolar QWs separates the topmost VBs and gives rise to polarized optical emission. Since the...

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Polarization induced electron populations in III - V nitride semiconductors

Polarization induced electron populations in III-V nitride semiconductors Transport, growth, and device applications by Debdeep Jena The III-V nitride semiconductors (GaN, AlN, InN) exhibit unusually large electronic polarization fields. These polarization fields can be engineered to achieve carrier confinement, doping, and band engineering in novel ways. This work presents work in engineering ...

Magnetic metastability in tetrahedrally bonded magnetic III-nitride semiconductors.

Results of density-functional calculations for isolated transition metal (TM = V, Cr, Mn, Fe, Co, Ni on cation sites) doped GaN demonstrate a novel magnetic metastability in dilute magnetic semiconductors. In addition to the expected high spin ground states (4muB/Mn and 5muB/Fe), there are also metastable low spin states (0muB/Mn and 1muB/Fe)--a phenomenon that can be explained in simple terms ...

Processing of Semipolar and Nonpolar InGaN Based Laser Diodes

Laser diodes (LDs) based on InGaN quantum well (QW) structures emitting in the blue to green spectral region are of great interest for applications ranging from spectroscopy to laser projectors for mobile devices. Whereas LDs in the blue spectral region are available commercially, the so-called “green gap” is just at the point of being bridged. The necessity of creating InGaN QWs with high indi...